C829 NPN Transistor is a Silicon NPN epitaxial planar type Transistor. Optimum For RF Amplification, Oscillation, Mixing, And IF Stage Of FM/AM Radios.
- Collector-base voltage (Emitter open) VCBO 30 V
- Collector-emitter voltage (Base open) VCEO 20 V
- Emitter-base voltage (Collector open) VEBO 5 V
- Collector current IC 30 mA
- Collector power dissipation PC 400 mW
- Junction temperature Tj 150 °C
- Made in China
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